Assessing the fundamental limits of the charge carrier mobilities in organic semiconductors is important for the development of organic electronics.
The fractional quantum Hall effect is studied in the 2D electron gas of four GaAs-Al(x)Ga(1-x)As heterostructures.
We perform a direct study of the magnitude of the anomalous splitting in the cyclotron resonance (CR) of a two-dimensional (2D) electron system as a function of sample disorder.
The Ge(111) surface undergoes a reversible disordering transition at 1050K, which is 160K below the Ge bulk melting temperature.
We have investigated by transmission electron microscopy the enhanced disordering of GaAs-AlAs superlattices due to Si and S implantation with subsequent annealing.
Selective disordering of In sub 0.53 Ga sub 0.47 As-InP multiple quantum well structures by Si implantation is demonstrated for the first time by transmission electron microscopy techniques.
The reversible disordering transition of Ge(111) surface near 1050K (160K below the bulk melting temperature) has been studied by low energy electron diffraction (LEED).
The scalable and multiview extensions of the High Efficiency Video Coding share the same high-level syntax coding structure.
Describes a dispersed telecommunication system which permits telephone and other exchanges to be located close to the subscribers but are controlled by computers remotely located so the computers c
The amplitude and phase responses of optical minimum-phase filters are uniquely related to each other and therefore their crosstalk and dispersion characteristics cannot be adjusted independently.
