Carbon nanotube (CNT) intra-connects (bridges spanning across in-plane electrodes) were electroplated with polypyrrole (PPy), an electrically conductive polymer (ECP).
We present a study of the electrical and structural properties of lattice-mismatched In sub x Ga sub (1-x) As strained layers grown on GaAs(100).
We report the fabrication of epitaxial CoSi sub 2 layers on Si(111) as thin as 1 nm.
Using high dose implantation of Cr sup (+) into (111)-oriented Si followed by annealing (mesotaxy[1]), we have fabricated buried, single crystal layers of CrSi sub 2 in Si.
Using high dose implantation of transition metals into Si followed by annealing (mesotaxy), we have fabricated buried, single crystal layers of CoSi sub 2, NiSi sub 2, and Cr Si sub 2 in Si.
This paper presents the characterization of single and multi-finger Indium Phosphide Double Heterojunction Bipolar transistors (InP DHBTs).
Simple analyses of high transition temperature (high-T sub c) superconducting microstrip transmission lines predict a nearly vanishing intrinsic dispersion and very low signal attenuation at temper
The electrical properties of plasma deposited silicon nitride films deposited at different rf powers were determined. The hydrogen content of these films was determined using FT-IR.
This paper highlights the electrical behaviour of the interconnects a 120-pin Ball Grid Array (BGA) package from 500 MHz upto 8 GHz.
In this work, we report on electrical characteristics of tantalum oxide films fabricated by anodic oxidation of tantalum nitride and tantalum silicide with thicknesses ranging from 100 to 4500 Angs
