Power-DAC circuits for high capacity and high spectral efficiency optical transmitters are presented in this paper.
We propose a new configuration for semiconductor optical amplifiers (SOAs), called optical speed-up at transparency (OSAT), which allows to speed up the gain recovery of SOAs and their saturation p
We have prepared by chemical beam epitaxy extremely high quality Ga(0.47) In(0.53)As/InP quantum wells with thickness as thin as 6angstroms.
The Cs intercalation process in multiwalled carbon nanotubes (MWNTs) was studied by cross-sectional scanning photoemission microscopy.
Most evaluations of the dispersion and loss of superconducting transmission lines emphasize intrinsic parameters, assuming an ideal dielectric, linewidth much larger than dielectric thickness and s
Technological applications of semiconductors depend critically on the ability to dope them.
Extrinsic information transfer (EXIT) charts are a tool for predicting the convergence behavior of iterative decoding of concatenated codes.
Two luminescence bands observed in pentacene single crystals with different degrees of purity are identified as due to extrinsic optical emissions.
In this paper we present a new and robust method to construct the eye diagram from asynchronous samples of a digital communication signal. No a priori knowledge of the bit period is needed.
Emerging microservices-based workloads introduce new security risks in today's data centers as attacks can propagate laterally within the data center relatively easily by exploiting cross-service d
