Publications

A fabrication process of two-dimensional photonic crystals has been developed.

Techniques have been developed to make silicon MOSFETs with minimum dimensions as small as 25 nm for fundamental electron transport studies.

Recently proposed tapered MMI devices have been shown to allow for substantial reductions in device geometries, but as of this time such ultracompact devices have not been realized, The fabrication

This paper discusses the fabrication of submicron p(++) silicon microstructures for a number of MEMS applications using boron ion implantation, rapid thermal annealing, and boron etch-stop.

Process technologies for the fabrication of III-V photonic and high speed electronic devices are described.

In this paper we describe the technological and fabrication methods necessary to incorporate both photonic and electronic-band engineering in order to create novel surface-emitting quantum cascade

Fabry-Perot laser arrays based on vertical p-i-n laser diode structures grown on InP layer directly bonded to Si wafer is presented.

This paper delves into the problem of face recognition using color as an important cue in improving the accuracy of recognition.

This paper delves into the problem of face recognition using color as an important cue in improving the accuracy of recognition.

Self-assembled monolayers (SAMs) of mercaptoalkanoic acids on gold and silver films were utilized to direct the nucleation of calcite crystals.