Publications

A new, simplied process has been developed for fabricating submicron Al sub (x) Ga sub (1-x) As-GaAs heterostructure devices for low temperature transport studies, with the advantage of gatability.

Current heavy metal fluoride glass fiber fabrication techniques are mostly based on the casting of preforms.

In recent work, resonant mode linewidths of 0.10nm (correspoding to a quality factor (Q) of about 13,000) were measured in a photonic crystal (PC) defect microcavity fabricated in an InAsP/InGaAsP

High temperature superconductors of the Ba sub 2 YCu sub 3 O sub 7 family are brittle materials which must be shaped from ceramic particles which are subsequently sintered to a dense ceramic.

A process for fabricating planar low dark current InP and In (0.53)Ga(0.47)As/InP based photodetectors is described.

Low-loss bidimensional photonic crystals have been fabricated by using an optimized process, consisting of electron beam lithography of a poly(methyl methacrylate) resist, reactive ion etching of a

Fabrication of metal-epitaxial insulator-semiconductor field effect transistors (MEISFETs) by molecular beam epitaxial growth of CaF2 on Si is reported for the first time.

This paper reports results from the first successful fabrication of MOS devices with extreme ultraviolet lithography (EUVL).

The incorporation of dopants and impurities in the fabrication of optical glass fibers is determined by a complex interaction of phenomena.

We demonstrate the formation, in a single process step, of periodic arrays of features of surface relief with submicrometer lateral dimensions in hybrid organic and inorganic solgel glasses by usin