We use hot electron spectroscopy to demonstrate the existence of extreme nonequilibrium electron transport in the base of n-p-n heterojunction bipolar transistors.
With the current significant penetration of mobile devices (i.e.
Power-digital-to-analog converters (DAC) circuits for high capacity and high spectral efficiency optical transmitters are presented in this paper.
Power-DAC circuits for high capacity and high spectral efficiency optical transmitters are presented in this paper.
We propose a new configuration for semiconductor optical amplifiers (SOAs), called optical speed-up at transparency (OSAT), which allows to speed up the gain recovery of SOAs and their saturation p
We have prepared by chemical beam epitaxy extremely high quality Ga(0.47) In(0.53)As/InP quantum wells with thickness as thin as 6angstroms.
The Cs intercalation process in multiwalled carbon nanotubes (MWNTs) was studied by cross-sectional scanning photoemission microscopy.
Most evaluations of the dispersion and loss of superconducting transmission lines emphasize intrinsic parameters, assuming an ideal dielectric, linewidth much larger than dielectric thickness and s
Technological applications of semiconductors depend critically on the ability to dope them.
Extrinsic information transfer (EXIT) charts are a tool for predicting the convergence behavior of iterative decoding of concatenated codes.
