We have fabricated low stress membranes from single crystal silicon for use as deformable mirrors in adaptive optics.
A T-shaped single quantum-wire laser with high spatial uniformity has been fabricated by a cleaved-edge overgrowth method with molecular beam epitaxy and a growth-interrupt annealing technique.
Prototypes of germanium doped silica ridge waveguides for planar lightwave circuits (PLCs) were fabricated using novel colloidal suspensions and optically characterized.
We report on the fabrication of polymer waveguides containing infrared emitting nanocrystal quantum dots.
We report the fabrication and performance characteristics of InGaAsP ridge waveguide lasers with multiquantum well (MQW) active layers emitting near 1.55microns.
We report the fabrication and performance characteristics of InGaAsP double channel planar buried heterostructure (DCPBH) lasers with multiquantum well active layers emitting at 1.3microns.
There has been a renewed interest recently in the use of charge storage on p-n junctions or capacitors for memory and shift register applications.
The fabrication of a large area InP/InGaAsP double-heterostructure LED monolithic matrixed array of 144 light emitting elements is presented.
Over the last several years, the technology for fabrication of long wavelength avalanche photodiodes (APDs) has matured considerably.
Single longitudinal mode operation of channeled-substrate buried heterostructure lasers is stabilized by coupling to external InP/InGaAsP Bragg reflectors.
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