A number of the fiber fabrication methods have evolved in response to the interest in active fiber devices based on rare earth doped core silicate fiber.
We have developed a fabrication procedure for reduced area InP/InGaAs based HBT and DHBT devices using a process involving both wet chemical and ICP plasma etching.
We have developed a robust fabrication procedure for reduced area InP based HBT's, using a process involving both wet etching and ECR plasma etching.
The focusing of subnanometer wavelength x rays is limited by the ability to fabricate high-quality optics.
For the last four decades, the feature sizes of electronic devices for computers have been reduced by a factor of two roughly every 18 months.
The trend toward surface mount technology (SMT) has increasingly stressed many areas in circuit-pack manufacturing, such as CAD tools, printed wiring board (PWB) manufacturing, electrical tests, an
A so-called SiDeox new technology to fabricate a thick silicon oxide layer with an underneath cavity for applications in RF MEMS devices is presented.
A fabrication process of two-dimensional photonic crystals has been developed.
Techniques have been developed to make silicon MOSFETs with minimum dimensions as small as 25 nm for fundamental electron transport studies.
Recently proposed tapered MMI devices have been shown to allow for substantial reductions in device geometries, but as of this time such ultracompact devices have not been realized, The fabrication
