There has been a renewed interest recently in the use of charge storage on p-n junctions or capacitors for memory and shift register applications.
The fabrication of a large area InP/InGaAsP double-heterostructure LED monolithic matrixed array of 144 light emitting elements is presented.
Over the last several years, the technology for fabrication of long wavelength avalanche photodiodes (APDs) has matured considerably.
Single longitudinal mode operation of channeled-substrate buried heterostructure lasers is stabilized by coupling to external InP/InGaAsP Bragg reflectors.
The discovery of high temperature superconductivity in perovskite- related oxides has generated an enormous amount of research activity and development effort toward applications.
A new method for fabricating narrow linewidth antiphase complex coupled MQW DFB lasers by periodically etching the active layer and quartemary InGaAsP overgrowth is reported.
Conventional quantum cascade (QC) lasers are intrinsically edge-emitting devices with mode confinement achieved via a standard mesa stripe configuration.
Structures as small as 20 nm have been fabricated in GaAs by high resolution electron beam lithography and reactive ion etching.
3D stacking of die with TSV (through Silicon Via) connection as well as wafer level packaging of CMOS image sensors (CIS) are becoming very hot topics.
Ba sub 2 YCu sub 3 O sub x ceramics have been hot pressed to yield microstructures with small amounts of preferred orientation and densities above 6.0 g/cm sup 3.
