The focusing of subnanometer wavelength x rays is limited by the ability to fabricate high-quality optics.
For the last four decades, the feature sizes of electronic devices for computers have been reduced by a factor of two roughly every 18 months.
The trend toward surface mount technology (SMT) has increasingly stressed many areas in circuit-pack manufacturing, such as CAD tools, printed wiring board (PWB) manufacturing, electrical tests, an
A so-called SiDeox new technology to fabricate a thick silicon oxide layer with an underneath cavity for applications in RF MEMS devices is presented.
A fabrication process of two-dimensional photonic crystals has been developed.
Techniques have been developed to make silicon MOSFETs with minimum dimensions as small as 25 nm for fundamental electron transport studies.
Recently proposed tapered MMI devices have been shown to allow for substantial reductions in device geometries, but as of this time such ultracompact devices have not been realized, The fabrication
This paper discusses the fabrication of submicron p(++) silicon microstructures for a number of MEMS applications using boron ion implantation, rapid thermal annealing, and boron etch-stop.
Process technologies for the fabrication of III-V photonic and high speed electronic devices are described.
In this paper we describe the technological and fabrication methods necessary to incorporate both photonic and electronic-band engineering in order to create novel surface-emitting quantum cascade
