A four-terminal epitaxial p-n-p junction field-effect transistor grown by molecular beam epitaxy is shown to be an effective one-component gain control element when operated as a 4 terminal device
A model is used to analyze the gain and phase dynamics of a semiconductor optical amplifier with a carrier reservoir (CR-SOA). Coupled rate equations are solved numerically.
Transient gain saturation and recovery with 110-340 us time constants were observed in erbium-doped fiber amplifiers.
A method wherein the error equation is differentiated with respect to the output rotation to determine the required gain equalization function is given.
We investigate the broad gain and flatness spectra (1520-1570nm) of an erbium doped aluminosilicate planar optical waveguide amplifier (POWA) pumped at 980nm.
We report on the broad gain and gain flatness spectra (1530-1565nm) of a 14cm long Er sup (3+) doped aluminosilicate waveguide amplifier pumped at 1470nm.
Terahertz (THz) time-domain spectroscopy is used to investigate the gain and losses of a THz quantum cascade laser (QCL) operating at 2.86 THz.
The gain of shallow paraboloid reflector antennas with random surface deviations has been derived by Ruze.
Recently, a standard horn was used as a calibration reference in measuring the gain of a 400-square foot aperture horn-reflector antenna at 4080 mcs.1 Since the horn-reflector antenna is currently
The gain of a highly efficient erbium-doped fiber amplifier was measured when pumped at wavelengths between 1.46microns and 1.51microns.
