GaAs solar cells are the highest efficiency single-junction photovoltaic technology. Their wide bandgap lends them to efficient conversion of indoor light.
Modulation-doped GaAs heterostructures with low temperature electron mobilities of 5.0 x 10 sup 6 cm sup 2 /Vs at a two- dimensional electron areal density of 1.6 x 10 sup (11) cm sup (-2) have bee
Monolithic optical logic devices 1.5-5microns across are defined by ion-beam assisted etching through a GaAs/AlAs Fabry-Perot structure grown by molecular beam epitaxy.
We present measurements of GaAs-AlGaAs multiple quantum well reflection modulators grown simultaneously on GaAs and silicon substrates.
We report improved growth conditions by molecular beam epitaxy (MBE) and fabrication of state-of-the-art AlGaAs/GaAs selectively doped heterostructure transistors (SDHT's) and ring oscillators on S
The merits of opto-electronic intergration are now well established.
Efficient coupling of long-wavelength infrared (LWIR) radiation to a 2-D array of GaAs/AlGaAs multiple quantum well detectors is achieved by illumination through chemically etched diffraction grati
We have achieved the first high responsivity R sub v = 30,000 V/W, high detectivity D* = 1 X 10 sup (10) cm sqrt Hz/W GaAs/AlGaAs multiquantum well superlattice detector which is sensitive in the l
The growth system and growth kinectics of chemical beam epitaxy (MBE) are briefly described and its differences from molecular beam epitaxy (CBE) and organometallic chemical vapor deposition (OM-C
Immunohistochemical techniques were used to study the distribution of GABA-like immunoreactive neurons in the nervous system of the slug Limax maximus.
