Publications

The present study, improving on a earlier effort, experimentally evaluates the pressure drop through gates of varying width, depth, and length, and converging angle.

This article has been prepared as an invited paper for Symposium J at the 1999 MRS fall meeting, Advanced Materials and Techniques for Nanolithography.

We report on progress and gate technology issues in scaling both NMOS and PMOS conventional planar transistors to a physical gate length of 30nm and an expected effective channel length of 10 nm.

We present low temperature transport measurements of C60-based single molecule transistors fabricated using ferromagnetic break junction devices with planar elliptical leads, revealing a gate-modul

The operation of thin-film, silicon-on-insulator (SOI) MOSFETs permits bias-dependent suppression of the kink effect.

The electrical and optical properties of conjugated polymers have received considerable attention in the context of potentially low-cost replacements for conventional metals and inorganic semicondu

This is an invited book chapter for "Molecular Nanotechnology" editored by Mark Reed.

We analyze gated, exhaustive service of an infinite-server system with vacations. Customers enter a queue in a Poisson stream. The servers, working in parallel, serve customers in stages.

The transresistance (i.e., the voltage induced in one layer by a current in another) between composite fermions in double-layers of half-filled Landau levels is shown to be dominated by scattering

Either from physical considerations or from exact calculations it is found that a Gaussian beam is grossly different from any free space mode.