Publications

The commercialization of blue, green and white GaN-based light-emitting diodes and violet laser diodes has created tremendous interest both from an applications viewpoint and for the basic science

A GaN based depletion mode metal oxide semiconductor field effect transistor (MOSFET) was demonstrated using Ga sub 2 O sub 3 (Gd sub 2 O sub e) as the gate dielectric.

We experimentally demonstrate the formation of GaN nanotip pyramids by selective and anisotropic etching of N-polar GaN in KOH solution.

The epitaxial growth of GaN on Si (1 1 1) substrates has been performed using plasma-assisted molecular beam epitaxy with a thin (similar to 19.3 nm) single-crystal layer of Sc2O3 as a template/buf

This paper presents the development of power MMICs in GaN HEMT technology for X-Band T/R modules.

GaN-based devices are currently developed in close collaboration with end-users. 10 years have been necessary to arrive at the edge of this development cycle.

We review two recent developments in the field of quantum cascade lasers.

Discrete GaN/AlGaN heterojunction bipolar transistors (HBTs) were fabricated on material grown by both metal organic chemical vapor deposition and molecular beam epitaxy.

We report an analysis of completeness and suitability of OpenConfig, OpenROADM and OpenDevice models, for physical-impairment aware network planning, and a proof-of-concept in a partially disaggreg

Good surface morphology and layer uniformity of LPE-grown films are favored by fast melt removal after growth.