Publications

We demonstrated gain-switching of several 5 and 8-μm quantum cascade lasers.

Quantum well structures containing single isolated structures and superlattices of GaInAs/InP and GaInAsP/InP and GaInAsP/InP have been grown by gas source MBE to establish the current limits of di

Proposes two new structures, the GaInAs-GaInNAs intermediate layer (IML) and the GaInN/sub x/As graded wells, which show better optical properties than the commonly used GaInNAs-GaAs rectangular qu

Quantum well structures containing single isolated quantum wells and superlattices of GaInAs/InP and GaInAsP/InP have been grown by Gas Source MBE in order to attempt to establish the limits of pre

Quantum Cascade (QC) lasers are based on inter-subband transitions in the conduction band.

Two step liquid phase epitaxy is shown to be impeded in the GaInAsP system by the difficulty of achieving uniform epitaxial wetting and highly radiative interfaces.

Double heterostructure lasers of Ga sub (x) In sub (1-x) As sub (1-y) Py lattice matched to InP and emitting at 1.55micron have been grown by chemical beam epitaxy (CBE).

Double heterostructure and separate confinement heterostructure lasers of Ga(x)In(1-x)As(1-y)P(y) lattice matched to InP and emitting at 1.5 micron have been grown by molecular beam epitaxy utili

Gallium antimonide and related compounds are promising materials for fabricating monolithic vertical cavity semiconductor lasers operating at telecommunications wavelengths.

We present maps showing the distribution of molecular gas in the Galactic center region.