Publications

A review of GaAs IC technology is presented with emphasis on capabilities of heterojunction FETs (HFETs) for lightwave, microwave, and LSI digital applications.

A 6-bit phase-shifter with integrated serial-to-parallel converter have been developed using a 0.2—m Enhancement/Depletion p-HEMT process.

GaAs monolithic integrated circuits for modulating junction lasers (laser-drivers) have been developed for a 1.7 Gb/s lightwave communication system.

Recent progress of GaAs-on-Si technology is reviewed and the importance of initial nucleation is emphasized.

GaAs solar cells are the highest efficiency single-junction photovoltaic technology. Their wide bandgap lends them to efficient conversion of indoor light.

Modulation-doped GaAs heterostructures with low temperature electron mobilities of 5.0 x 10 sup 6 cm sup 2 /Vs at a two- dimensional electron areal density of 1.6 x 10 sup (11) cm sup (-2) have bee

Monolithic optical logic devices 1.5-5microns across are defined by ion-beam assisted etching through a GaAs/AlAs Fabry-Perot structure grown by molecular beam epitaxy.

We present measurements of GaAs-AlGaAs multiple quantum well reflection modulators grown simultaneously on GaAs and silicon substrates.

We report improved growth conditions by molecular beam epitaxy (MBE) and fabrication of state-of-the-art AlGaAs/GaAs selectively doped heterostructure transistors (SDHT's) and ring oscillators on S

The merits of opto-electronic intergration are now well established.