The demand for data across all communication networks continues to grow exponentially.
A planar radar sensor for automotive application is presented in this paper.
This paper reports a fully ion-implanted p-n junction using Si for n layer implant and P/Be co-implant for a shallow p sup + surface layer. C-V measurement has shown an abrupt junction behavior.
We demonstrate an ultra-compact monolithic integrated silicon-based slave transceiver integrating a D-BPSK receiver and a polarization insensitive reflective modulator.
We describe the fabrication of monolithically integrated, 1x12 arrays of In0.53Ga0.47As/InP photodiodes.
A scalable, fully provisioned 112x112 micro-mechanical optical cross connect with mean insertion loss of 7.5dB @1550nm into single-mode optical fiber and 10ms switching speed is presented.
The Stern-Gerlach magnetic deflection spectra of a molecular beam of O sub 2 cooled by supersonic expansion to its lowest rotational level (K=1) reveals nine spatially separated peaks within a span
We report on a fully functional 2.5 Gb/s EA-modulated wavelength-selectable laser module meeting all long-haul transmission requirements for stability, chirp, power and linewidth over 20 channels o
We demonstrate a fully-connectorized and packaged, 2X1 high- speed TiLiNbO(3) directional coupler switch suitable for both optical time-division multiplexing/demultiplexing and modulation at 1.3mic
Thin film fully-depleted Silicon-on-Insulator (SOI) CMOS technology can achieve a maximum oscillation frequency fmax of 50 GHz for 1V supply voltage, when TiSi2 is used on the gate.
