Publications

Displaying 14571 - 14580 of 37748

Ga(0.47)In(0.53)As Ultra High Gain, High Sensitivity Photoconductors Grown by Chloride Vapor Phase Epitaxy.

We report highly sensitive planar, interdigitated Ga((0.47)In (0.54)As photoconductive detectors prepared by trichloride vapor phase epitaxy.

Ga(0.47)In(0.53)As/InP multiquantum well heterostructure lasers grown by molecular beam epitaxy operation at 1.53 micron.

Current injection Ga(0.47)In(0.53)As/InP multiquantum well heterostructure lasers operating at 1.53 micron have been successfully prepared by molecular beam epitaxy.

Ga-doped ZnO single crystal nanotips grown on fused silica by metalorganic chemical vapor deposition

In situ Ga-doped ZnO nanotips were grown on amorphous fused silica substrates using metalorganic chemical vapor deposition.

Ga0.47In0.53As field effect transistors with a lattice-mismatched reduced leakage current GaAs gate.

A lattice-mismatched GaAs gate Ga0.47In0.53As field effect transistor (LMG-FET) with significantly reduced reverse gate leakage current is reported.

GaAlAs/GaAs Floating-Gate Memory Devices with Graded-Gap Injector grown by Molecular Beam Epitaxy

The operation of the first floating-gate memory device in the AlGaAs/GaAs material system is reported and its applicability to dynamic and permanent memories is discussed.

GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application

This paper reports on low-pressure metalorganic vapour deposition (LP-MOCVD) growth optimisation of GaAlN/GaN heterostructures grown on SiCopSiC (silicon carbide-oxyde-polycrystalline silicon carbi

GaAs APD's and the effect of rapid thermal annealing on crystalline quality of GaAs grown on Si by MBE.

Photoluminescence, Rutherford back-scattering/channeling, x- ray double crystal rocking curves, and minority carrier lifetime suggest that structural and optical properties of GaAs grown on Si by M

GaAs field effect transistors prepared on lattice-mismatched InP substrates for monolithic optoelectronic integration.

We demonstrate for the first time a depletion mode field effect transistor fabricated on GaAs which is grown on top of a lattice- mismatched InP substrate by molecular beam epitaxy.

GaAs Heterostructure FET Frequency Dividers Fabricated with a High-Yield 0.5micrometer Direct-Write Trilevel-Gate-Resist.

Frequency dividers and FET test structures have been fabricated on selectively doped n sup + -AlGaAs/GaAs heterostructure FETs (HFETs) with 0.5micrometer gate length electron-beam direct- writing

GaAs IC Processing

AT&T requires ultra-high speed electronics for its fiber-optic communication systems.