G.fast will enable service providers to deliver gigabit speeds over last-mile copper and take a big step toward bringing fiber to the home.
The draft ITU-T standard for MGfast technology transmission of up to 10 Gbps over copper is scheduled for completion July 2019.
We report the operation of the first Ga sub (0.47) In sub (0.53) As/InP superlattice avalanche photodiode grown by metalorganic chemical vapor deposition.
The power performance of GaAs MOSFET's using Ga sub 2 O sub 3(Gd sub 2 O sub 3) as the gate dielectric is presented.
Ga sub 47 In sub 53 As/InP metal-insulator semiconductor FET's are fabricated from epitaxial layers grown by chemical beam epitaxy. The layer sequence is shown in Fig.
We report highly sensitive planar, interdigitated Ga((0.47)In (0.54)As photoconductive detectors prepared by trichloride vapor phase epitaxy.
Current injection Ga(0.47)In(0.53)As/InP multiquantum well heterostructure lasers operating at 1.53 micron have been successfully prepared by molecular beam epitaxy.
In situ Ga-doped ZnO nanotips were grown on amorphous fused silica substrates using metalorganic chemical vapor deposition.
A lattice-mismatched GaAs gate Ga0.47In0.53As field effect transistor (LMG-FET) with significantly reduced reverse gate leakage current is reported.
The operation of the first floating-gate memory device in the AlGaAs/GaAs material system is reported and its applicability to dynamic and permanent memories is discussed.
