Ga sub 2 O sub 3(Gd sub 2 O sub 3)/GaAs Power MOSFET's

The power performance of GaAs MOSFET's using Ga sub 2 O sub 3(Gd sub 2 O sub 3) as the gate dielectric is presented. The I-V characteristics of the power devices are virtually free of hysteresis, indicating low interface state density in the oxide/GaAs interface. When operated at cellular frequency (850 MHz) and tuned for maximum output power, maximum power-added efficiencies of 45% and 56% were obtained under 3V and 5V operation, respectively. The output power of 26.5 dBm was measured from a 1 micron x 2.4 mm device under 5V operation. These results show that the developed GaAs MOSFET's are a promising candidate for microwave power amplifiers.