Publications

The electronic properties of compensated InP crystals can be used to sensitively monitor gas-surface interactions.

We report for the first time the growth of GaSb/AlSb multilayers and alloys on Si(100) by molecular beam epitaxy.

The gaseous neurotransmitters nitric oxide (NO) and carbon monoxide (CO) are prominent and universal components of the array of neurotransmitters found in olfactory information processing systems.

Modern integrated circuits can contain transistors smaller than 100 nm and gate oxides as thin as 2 nm.

The excessive gate leakage current of the planar- and mesa-type InAlN/GaN heterostructure field-effect transistors (HFETs) is evaluated.

We have fabricated In sub (0.52) Al sub (0.48) As/In sub (0.

Frequency dividers and ring oscillators have been fabricated with submicron gates on selectively doped AlGaAs/GaAs heterostructure wafers.

An integrated set of gate matrix tools was developed for the physical implementation of GaAs IC circuits to demonstrate the capabilities of a new LSI GaAs pilot production line, partially supported

As the silicon industry moves forward, smaller devices with lower operating voltage and thinner gate oxides are being manufactured.

We demonstrate that reliability projections can be improved significantly if oxide thickness uniformity is improved.