This paper reports on low-pressure metalorganic vapour deposition (LP-MOCVD) growth optimisation of GaAlN/GaN heterostructures grown on SiCopSiC (silicon carbide-oxyde-polycrystalline silicon carbi
Photoluminescence, Rutherford back-scattering/channeling, x- ray double crystal rocking curves, and minority carrier lifetime suggest that structural and optical properties of GaAs grown on Si by M
We demonstrate for the first time a depletion mode field effect transistor fabricated on GaAs which is grown on top of a lattice- mismatched InP substrate by molecular beam epitaxy.
Frequency dividers and FET test structures have been fabricated on selectively doped n sup + -AlGaAs/GaAs heterostructure FETs (HFETs) with 0.5micrometer gate length electron-beam direct- writing
AT&T requires ultra-high speed electronics for its fiber-optic communication systems.
A review of GaAs IC technology is presented with emphasis on capabilities of heterojunction FETs (HFETs) for lightwave, microwave, and LSI digital applications.
A 6-bit phase-shifter with integrated serial-to-parallel converter have been developed using a 0.2—m Enhancement/Depletion p-HEMT process.
GaAs monolithic integrated circuits for modulating junction lasers (laser-drivers) have been developed for a 1.7 Gb/s lightwave communication system.
Recent progress of GaAs-on-Si technology is reviewed and the importance of initial nucleation is emphasized.
We have achieved avalanche gain at a wavelength of 10.3microns in Al sub x Ga sub 1-x As/GaAs quantum well superlattices.
