Gain control operation of a four-terminal p-n-p In(0.53)Ga (0.47) As/InP junction field effect transistor grown by molecular beam epitaxy.

A four-terminal epitaxial p-n-p junction field-effect transistor grown by molecular beam epitaxy is shown to be an effective one-component gain control element when operated as a 4 terminal device. Control of amplifier gain is demonstrated by using the back-gate terminal to adjust the transconductance of a standard 3-terminal transistor. The effect of parasitic capacitance on amplifier gain and cut-off frequency is described for a common-source configuration.