We have carried out a systematic study of optical emission in Er doped silica glass materials with different codopants.
In this work, the authors have presented a description of our spectral laser model and performed spectroscopic simulations of a 975 nm tapered laser diode.
In this paper, we review the pivotal role that defects (in particular vacancy strucutres) play in driving the H-induced exfoliation of Si.
To gain an understanding of the energetics of cooperativity in methemoglobin, we have studied the effect of IHP on the optical absorption spectra, resonance Raman spectra, and circular dichroism o
Vibrational relaxation in large molecules in condensed phase is usually exceedingly fast.
Free carriers in semiconductor heterojunctions and quantum wells induce fundamental changes in the optical properties.
Photoluminescence excitation (PLE) spectra are reported for six single quantum wells with thicknesses between 130angstroms and 23angstroms grown on the same wafer by chemical beam epitaxy.
Resonant Raman scattering has disclosed several unique features of the electronic and vibrational excitations of GaAs-A1GaAs quantum well heterostructures.
Investigation of the time evolution of extremely nonequilibrium charge carriers photoexcited into a semiconductor by a femtosecond laser gives valuable information about various scattering process
This article reviews inelastic light scattering studies of free carriers in semiconductor heterojunctions, multiple quantum well heterostructures, heterojunction superlattices, and in quantum well
