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In this paper, we review the pivotal role that defects (in particular vacancy strucutres) play in driving the H-induced exfoliation of Si.

To gain an understanding of the energetics of cooperativity in methemoglobin, we have studied the effect of IHP on the optical absorption spectra, resonance Raman spectra, and circular dichroism o

Free carriers in semiconductor heterojunctions and quantum wells induce fundamental changes in the optical properties.

Photoluminescence excitation (PLE) spectra are reported for six single quantum wells with thicknesses between 130angstroms and 23angstroms grown on the same wafer by chemical beam epitaxy.

Resonant Raman scattering has disclosed several unique features of the electronic and vibrational excitations of GaAs-A1GaAs quantum well heterostructures.

Investigation of the time evolution of extremely nonequilibrium charge carriers photoexcited into a semiconductor by a femtosecond laser gives valuable information about various scattering process

This article reviews inelastic light scattering studies of free carriers in semiconductor heterojunctions, multiple quantum well heterostructures, heterojunction superlattices, and in quantum well

The complex surface impedance of high-quality superconducting films is measured at microwave and sub-millimeter wave frequencies using high-speed opto-electronic techniques.

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