Publications

Silicon-On-Insulator (SOI) technology will be needed for future generations of radiation-hardened integrated circuits.

We have developed and tested a technique for measuring the radiation response of the interface of silicon-on-insulator (SOI) materials.

We have developed two new methods for at-wavelength inspection of mask blanks for extreme-ultraviolet (EUV) lithography.

HAT radars are marvels of ingenuity has long since become common knowledge. This ingenuity is reflected, however, in complexity of circuits.

A previous paper 1 has dealt with the problem of automatic equalization for data transmission systems.

Techniques for representing the entire gray scale of a picture by only two levels have been receiving considerable attention 1 - 1 0 because many devices are limited to recording or displaying two-

Bragg reflector fabrication techniques on SiO sub 2 - Si sub 3 N sub 4 - SiO sub 2 rib waveguides on Si are developed and optimized.

This memorandum is intended as a roadmap for selecting signal processing techniques that reduce the effects of transmission impairments, and thereby provide higher data rates, improved error rates,

The distributed embedded systems industry is poised to leverage emerging real-time operating systems, such as Inferno, Windows CE 2.0, and Palm OS, to support mobile communication applications.

Molecular beam epitaxy has inspired many novel device structures that require a linear variation of doping density or alloy composition as a function of depth.