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The structural effects of applying stress to a pseudomorphic overlayer has been extensively studied over the past two decades.

Recently there has been considerable interest in multilayered structures involving epitaxial silicides and silicon.[1-3] The use of a thin (30A) silicon template layer has been shown to improve the

774 776 781 783 783 785 786 786 789 789 789 790 792 794 794 795 796 796 797 797 801 804 805 806 807 808 809 809 810 The point-contact transistor, on the basis of several years use in the field in B

The extent of P over doping of BPSG during the PBr3 - induced flow/getter operation can be characterized by the "penetration depth" of the excess phosphorous.

Persistent photoconductivity in Te-doped Al sub x Ga sub (1- x) was measured. It was found that the photoconductivity rise is a phonon assisted process.

Femtocells are considered as an enabler for low power, high bit rate future mobile access networks.

Electrolytic and electroless Ni/Au are common pad surface finishes on area array (BGA or CSP) packages and printed wiring boards (PWB).

Missing packets are a major source of impairment in packet voice networks.