Publications

We measure dose dependence of as-implanted damage and density of threading dislocations formed after MeV implants into Si.

HE regulation requiring that carrier frequencies be maintained to within fifty cycles of their assigned values has resulted in the practical disappearance from shared broadcast channels of the hete

The interdiffusivity in artificial multilayered films can be measured by monitoring, as a function of annealing time, the intensity of the X-ray peaks resulting from the composition modulation.

The number of wavelength conversions required to handle dynamic traffic in a WDM network is significantly more than for comparable static traffic.

The number of wavelength conversions required to handle dynamic traffic in a WDM network is significantly more than for comparable static traffic.

Spontaneous and piezoelectric polarization in hexagonal GaN/AlGaN heterostructures give rise to large built-in electric fields.

In a number of large computing systems that were of similar design, interunit cables within the systems were found to be responsible for much of the radiated emission.

We have measured Auger electron emission from single crystal targets of Si(111) bombarded with H(+) and (4)He(+) beams in the 0.5 to 1.8 MeV range under channeled and random directions of inciden

An analysis of overlay measurements for wafers patterned by Direct Write suggested that resist charging can induce pattern placement errors during e-beam lithography.

The study of the metal-semiconductor contact, i.e., the Schottky barrier (SB) is an endeavor that has spanned several decades[1-4].