A variety of materials and techniques are discussed concerning the use of inorganic materials in resist patterning technology.
A fundamental difference between amorphous Si prepared by Si implantation (amorphized Si) and crystalline Si lies in the fact that the ordered Crystal is well defined, whereas the disordered amorph
Cosmic ray proton data (125 to >2000 MeV) measured in the inner three-dimensional heliosphere over the years from 1993 into 2000 by the Ket instrument on the Ulysses spacecraft are examined.
We propose that the large-scale, long-term structure of the heliosphere, as evidenced by daily values of interplanetary quantities, is largely controlled by low frequency solar modes.
Much of the experimental progress in Quantum Hall and Composite Fermion physics over the past seventeen years has depended on the continuous improvement of the carrier mobility of the two dimension
The central conclusion of this work, which has important implications for a broader understanding of other disordered and inhomogeneous thin-film systems is that specific microstructural morphologi
Having prepared poly(vinylidene fluoride) (PVF(2)) with 0.
An inverse photoemission study (at (n)omega = 9.7 eV) of the adsorption of carbon monoxide on a Pd(111) surface is compared with a first principles calculation of the cross-section for the emissi
We have studied the mechanism of increased etch rate induced in InP substrates by focused Ga ion implantation and Cl sub 2 etching.
In this paper, we report experiments and simulations on thin oxide (1.5-3 nm) MOS devices, showing that native traps can play a dominant role in the tunneling characteristics of such oxides.
