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We have calculated explicitly the dependence of the dislocation density on crystal radius and ambient temperature gradient in GaAs grown by the LEC technique.

A moving charge-density wave (CDW) is subject to damping forces resulting from interactions of the CDW with its environment.

Profile evolution of trenches and lines, both nested and isolated, during etching with Cl-2, HBr, and HCl plasmas in a high density, commercial etch tool was investigated.

Feature evolution of trenches during high density plasma etching with Cl sub 2, HBr, and HCl plasmas are studied. Trenches were etched both with and without an insulating SiO sub 2 mask layer.

Overview of the role of flexibility in next generation direct detection and coherent passive optical networks.

To represent the apparent inability of supercooled liquids to form infinite amorphous well-bonded regions, we add frustration interactions to the Stillinger-Weber tiling model.

BACKGROUND: To address social inequalities in adolescent substance use and consequent disparities in health, it is important to identify the mechanisms of the association between substance use and

The IP multimedia subsystem (IMS) architecture is emerging as the service architecture to support multimedia services in a converged network. IMS is addressing conversational services.

A variety of materials and techniques are discussed concerning the use of inorganic materials in resist patterning technology.

A fundamental difference between amorphous Si prepared by Si implantation (amorphized Si) and crystalline Si lies in the fact that the ordered Crystal is well defined, whereas the disordered amorph

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