Fast Packet Switching technology has demonstrated the feasibility of t transmitting and switching packetized voice, data, and video in a single network, enabling the construction of sophisticated m
Fast Packet Switching technology has demonstrated the feasibility of t transmitting and switching packetized voice, data, and video in a single network, enabling the construction of sophisticated m
We present core level and valence band photoemission spectra of stages 1 and 2 potassium-mercury intercalated graphite, taken using a monochromatic x-ray source.
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The value of information can be shown in several ways.
We compare alternative ROADM network architectures through a study based on real LEC data.
Integrated circuits are commonly packaged by encapsulating a metal lead frame and integrated circuit with a thermosetting plastic in a transfer molding operation.
We have fabricated and demonstrated a new device called the Vertical Replacement-Fate (VRG) MOSFET.
We have fabricated and demonstrated a new device which we refer to as the Vertical Replacement-Gate (VRG) MOSFET.
We describe a process for vertical MOSFETs with: (1) precise gate length below 50 nm with current lithography; (2) gate oxide grown on a single-crystal silicon channel; and (3) shallow, self-aligne
