Publications

We present core level and valence band photoemission spectra of stages 1 and 2 potassium-mercury intercalated graphite, taken using a monochromatic x-ray source.

First Page of the Article

The value of information can be shown in several ways.

We compare alternative ROADM network architectures through a study based on real LEC data.

Integrated circuits are commonly packaged by encapsulating a metal lead frame and integrated circuit with a thermosetting plastic in a transfer molding operation.

We have fabricated and demonstrated a new device called the Vertical Replacement-Fate (VRG) MOSFET.

We have fabricated and demonstrated a new device which we refer to as the Vertical Replacement-Gate (VRG) MOSFET.

We describe a process for vertical MOSFETs with: (1) precise gate length below 50 nm with current lithography; (2) gate oxide grown on a single-crystal silicon channel; and (3) shallow, self-aligne

We have demonstrated a new device called the Vertical Replacement-Gate (VGR) MOSFET.

HE ordinary telephone receiver is one of the most sensitive known detectors of weak alternating currents over a considerable part of the audible frequency range.