The use of a two-dimensional electron gas in electronic devices leads to improved performance through reductions in scattering, confinement of the electron current to a well-defined sheet, and fr
We present a fabrication process and results of transport measurements of a number of p-channel heterojunction-insulated-gate field-effect transistors (HIGFETs).
We demonstrate the first successful mapping of the two-dimensional electro-static potential in semiconductor transistor structures by electron holography.
We have investigated the effect of an in-plane parallel magnetic field (B-parallel to) on two high mobility metalliclike dilute two-dimensional hole gas systems in GaAs quantum wells.
By carefully analyzing the low temperature density dependence of 2D conductivity in undoped high-mobility n-GaAs heterostructures, we conclude that the 2D metal-insulator transition in this 2D elec
Based on enabling distributed object technology, a two-dimensional modeling approach is presented for TMN.
Based on magnetotelluric data acquired by off-shore EMSLAB experiments, a modeling by a finite element method has been made with the surface structure fixed. Two low resistivity layers occur.
Two-dimensional (2D) NMR is a versatile technique which exists in many versions. Two broad classes of 2D techniques are (1) correlated spectroscopy and (2) J-resolved spectroscopy.
This paper describes a 2D numerical simulation technique for impact ionization.
We demonstrate a two-dimensional photonic crystal defect laser diode based on a coupled cavity waveguide.
