Publications

The spontaneous emission of a GaAs-based tapered laser diode emitting at lambda = 1060 nm was measured through a window in the transparent substrate in order to study the carrier density distributi

Scanning Spreading Resistance Microscopy (SSRM) is a powerful tool originally developed for measuring two-dimensional (2-D) carrier distributions in Si device structures with nm-spatial resolution.

Scanning spreading resistance microscopy (SSRM) is a powerful tool originally developed for measuring two-dimensional (2D) carrier distributions in Si device structures with nm spatial resolution.

We demonstrate two-dimensional control of coherent modes of surface plasmons (SP) in a metallic array of subwavelength apertures.

Shubnikov-de Haas, quantum Hall effect, and cyclotron resonance measurements revealed the existence of a high mobility, two- dimensional electron gas at the Ga0.47In0.53As/InP heterointerface gro

We designed and performed low-temperature dc transport characterization studies on two-dimensional electron gases confined in lattice-matched In0.

The heterointerface between epitaxial layers of dissimilar semiconductors forms a useful locus for confinement of electrons to two-dimensional motion.

Electron mobilities in modulation-doped GaAs-AlGaAs heterostructures [1] presently exceed values of 10 sup 7 cm sup 2 /Vsec at low temperatures, equivalent to elastic mean free paths of ~100 microm

The use of a two-dimensional electron gas in electronic devices leads to improved performance through reductions in scattering, confinement of the electron current to a well-defined sheet, and fr

We present a fabrication process and results of transport measurements of a number of p-channel heterojunction-insulated-gate field-effect transistors (HIGFETs).