We report the results of a detailed experimental and theoretical study of the ultrafast relaxation processes in superconducting K3C60, and Rb3C60 films.
The strong potential for new technological applications provided by organic semiconductors has spurred extensive research efforts in these materials.
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Laser action normally is initiated by the amplification of spontaneous emission.
We monitor the refractive index n + ik of an optically thin silicon layer following femtosecond photo-excitation below the threshold fluence E(TH) for melting in order to measure the rate of lattic
Non-equilibrium transport in GaAs and InP is investigated at electric fields up to 130 kV/cm and with a time resolution of 20 fs.
We report on InGaAs/InGaAlAs electro-absorption modulators for ultrafast all-optical signal processing. The structure design is based on the use of small conduction and valence band offsets.
We present the first direct investigation of the coherence properties of resonant secondary emission (RSE) from quantum well exciton.
We report on the first comparative study of room temperature intersubband (IS) scattering lifetimes in a variety of single and coupled double GaN/AlGaN MQW samples at different excitation powers an
We present measurements of intersubband transitions in the communications wavelength range using GaN/AlGaN heterostructures that have multiple single and coupled quantum wells.
