Publications

Carrier activation dynamics is measured in self-assembled InAs/GaAs quantum dots with a high degree of electronic state symmetry, at room temperature and following resonant excitation in the ground

Carrier activation dynamics is measured in self-assembled InAs/GaAs quantum dots with a high degree of electronic state symmetry, at room temperature and following resonant excitation in the ground

We report the carrier dynamics of 1.3-mm InAs quantum dots, following resonant excitation in the lowest energy state of the quantum dots.

We report the carrier dynamics of 1.3-um InAs quantum dots, following resonant excitation in the lowest energy state of the quantum dots.

We demonstrate subpicosecond electrical pulse propagation using coplanar air-transmission lines.

We use subpicosecond laser pulses to generate and monitor in real time collective oscillations of electrons in a modulation-doped GaAs quantum well.

A variety of important dynamical phenomena at metal and semiconductor surfaces are now being investigated using new ultrafast measurement techniques involving lasers and nonlinear optics.

The large dielectric constant and small effective mass in a semiconductor allows a description of its electronic states in terms of envelope wavefunctions whose energy, time, and length scales are

We report the results of a detailed experimental and theoretical study of the ultrafast relaxation processes in superconducting K3C60, and Rb3C60 films.

The strong potential for new technological applications provided by organic semiconductors has spurred extensive research efforts in these materials.