Sound velocity, attenuation and thermal expansion measurements are reported on La sub (1.85) Sr sub (.15) Cu O sub 4.
We report measurements of the sound velocity in a wide variety of the high T sub c superconductors. They all show a pronounced hardening of the sound velocity below T sub c.
The synthesis of the first polyalkylsilynes [RSi] sub n, a previously unknown class of silicon-silicon bonded network materials, has been accomplished using high-intensity ultrasound to promote th
Nature has endowed the silicon microelectronics industry with a wonderful material, SiO sub 2, as shown in Table 1. SiO sub 2 is native to Si, and with it forms a low defect density interface.
The application of thin semiconductor layers as etch masks for high vacuum lithography is described.
Oxynitride films have been formed by rapid thermal processing of N-implanted wafers.
The application of thin semiconductor layers as etch masks for high vacuum lithography is described.
A novel method is proposed to prepare ultrathin silicon oxynitride films for gate dielectrics used in deep submicron MOSFET device structures, namely plasma immersion N implantation into SiO sub 2
We report on a lithographic technique that uses self-assembled monolayers (SAMs) as a resist to fabricate patterned, chemically functionalized surfaces.
A new experimental setup for performing photoemission is described which utilizes harmonic generation of short pulsewidth coherent vacuum UV light as well as time-of-flight electron spectroscopy to
