Publications

The synthesis of the first polyalkylsilynes [RSi] sub n, a previously unknown class of silicon-silicon bonded network materials, has been accomplished using high-intensity ultrasound to promote th

Nature has endowed the silicon microelectronics industry with a wonderful material, SiO sub 2, as shown in Table 1. SiO sub 2 is native to Si, and with it forms a low defect density interface.

The application of thin semiconductor layers as etch masks for high vacuum lithography is described.

Oxynitride films have been formed by rapid thermal processing of N-implanted wafers.

The application of thin semiconductor layers as etch masks for high vacuum lithography is described.

A novel method is proposed to prepare ultrathin silicon oxynitride films for gate dielectrics used in deep submicron MOSFET device structures, namely plasma immersion N implantation into SiO sub 2

We report on a lithographic technique that uses self-assembled monolayers (SAMs) as a resist to fabricate patterned, chemically functionalized surfaces.

A new experimental setup for performing photoemission is described which utilizes harmonic generation of short pulsewidth coherent vacuum UV light as well as time-of-flight electron spectroscopy to

A silica optical fiber doped with Sb is fabricated with a refractive-index profile that is comparable with standard single-mode fiber.

In the evolution of optical networks, spectral efficiency (SE) enhancement has been the most cost-efficient and thus the main driver for capacity increase for decades.