The horizontal electric field, E sub H , at a single point in the deep ocean is theoretically proportional to a conductivity-weighted vertical integral of water velocity, plus a "noise" due to elec
To maintain the same beam quality as that of a single emitter and to be close to diffraction limit, we have combined a phase corrected array, emitting at gimel = 975 nm, coherently using the Talbot
To maintain the same beam quality as that of a single emitter and to be close to diffraction limit, we have combined a phase corrected array, emitting at lambda = 975 nm, coherently using the Talbo
We describe a new incremental algorithm for the concurrent reclamation of a program's allocated, yet unreachable, data.
Experimental demonstration of a bit rate as high as 32 Gbit/s is achieved over 20 km SMF for NGPON in a temperature range of 5¿¿C-60¿¿C using AMOOFDM direct modulation of a linear laser.
Superlattice structures incorporating HgTe wells and either ZnTe or CdTe barriers are promising candidates for novel optoelectronic devices.
Planar, diffused, InGaAs/InP pin detectors have been optimized for high speed operation.
This paper explores the potential of bit-level pipelined VLSI for high-speed signal processing. We discuss issues involved in designing such fully pipelined architectures.
GaAs/Al(x)Ga(1-x)As single and multiquantum well heterostructures were grown for the first time by chemical beam epitaxy.
Field emitters made from carbon nanotubes exhibit excellent macroscopic emission properties; they can operate at a very large current density, as high as 4 A/cm2.
