Publications

We report a new super self-aligned graded SiGe base transistor that uses high-energy implantation, rather than epitaxial growth, to form the sub- collector region.

The first device performance of GaAs/Al(x)Ga(1-x)As double- heterostructure (DH) lasers grown by chemical beam epitaxy (CBE) is reported.

We report a planar AlInAs/GaInAs APD presenting simultaneously the lowest multiplied dark current ever reported (IdM = 0.19 nA), a responsivity of 0.9 A/W (at M = 1), a very low noise (F(M = 10) =

We have developed 1.55 μm quantum dash Fabry-Perot lasers based on InP using a ridge waveguide.

Record low threshold current densities have been achieved in InGaAs/InGaAsP step graded index separate confinement (GRIN SCH) quantum well lasers emitting close to 1.50microns.

Currently, atomic clocks need a lot of specificities about optical sources: a high power for atomic cooling or atomic detection, a high spectral purity and a good beam quality.

A superheterodyne with a.v.c., squelch and noise-limiter circuits, for ground-station reception of signals in the range 118-136 Mc/s. The low i.f.

VDSL services are overviewed with an emphasis on the basic architecture, applications, and data rates, as well as the technological challenges of design.

Long-period fibre gratings fabricated period-by-period with focused CO2 laser pulses are shown to be highly stable even when subjected to temperatures up to 1200 degrees C.

We construct a 32-channel 12.5GHz-spaced free space demux with low crosstalk and low polarization dependent loss. Using this demux, we study vestigial sideband filtering at 10Gb/s.