The ability to extract topology information from the network is important for many applications and enables more informed resource selection or application-level traffic routing.
The electrolytic condenser is formed by the immersion of aluminium in a suitable electrolyte, a thin film of oxide functioning as the dielectric.
Here we present a new tapered semiconductor optical amplifier (SOA) structure that exhibits more than 600 mW output power at a wavelength of 780 nm.
WDM amplification tests performed on highly erbium-doped fibers show that 36-dB/m fibers offer the best tradeoff to design efficient compact WDM amplifiers.
An important step in the chemical vapor deposition (CVD) of aluminum from triisobutylaluminum (TIBA) is the reaction between TIBA (adsorbed from the gas phase) and the growing aluminum surface.
The chemistry of the Al polyimide interface is examined by XPS sputter profiling.
We have studied aluminum implantation enhanced intermixing of GaAs-AlGaAs quantum well structures using low temperature photoluminescence.
Grating couplers in sputtered aluminum nitride, a piezoelectric material with low loss in the C band, are demonstrated.
We are evaluating aluminum nitride (AlN) substrates because of their favorable thermal properties.
Amorphous thin films with very low attenuation are grown by MO-PECVD. The modifications due to the annealing condition are subject of investigations.
