We have measured the excitation yield for carriers produced at the outermost atomic layer of a GaAs(110) surface by impinging hyperthermal Xe and Kr neutral atoms.
The following is a short summary manuscript for inclusion in the Springer-Verlag book of the proceedings of the Solvay Conference on Surface Science, held December 14-18, 1987 in Austin, Texas.
In a practical installation the one-way paths would be shielded from each other either by placing them in separate cables or by placing them in a single cable divided into two electrical compartmen
Measurements of the carrier induced refractive index change in AlGaAs quantum well lasers are presented which show that the guided mode in single quantum well lasers exhibits a small ((delta)n/(d
In this paper, we describe a new carrier phase estimator, called TD estimator, suited to transmission schemes based on convolutional turbo-codes.
Formulae are derived for the path attenuation between two aerials of given effective surface areas, or two parabolic aerials, for conditions of free-space propagation.
Radio rediffusion employs the telephone network for the dissemination of radio broadcast programmes but need not be confined to telephone subscribers.
We have investigated tin doping at high concentrations in InP films grown on InP by liquid phase epitaxy.
Room temperature photoluminescence of p-i-n InGaAsP/InP multiple quantum well heterostructures was investigated under different excitation intensities.
T h e L-type multiplex operates by frequency-division and thus requires a source of carrier power for each channel or group of channels transposed from one frequency band to another.
