RAD ribbons exhibit a polycrystalline texture similar to that of most melt-grown ribbons with the exception of the WEB material.
Defect mechanisms of both gradual and rapid degradations of channeled-substrate-buried-heterostructure (CSBH) lasers during accelerated aging have been studied in detail by transmission electron mi
The application of transient junction current and capacitance techniques to the study of imperfection in semiconductor materials is reviewed.
X-ray diffraction studies show full atomic order in stoichiometric LiNbO3. In the congruent composition [Li0.941NbO2.971], 6% Li is missing from all Li-sites.
Transmission electron microscopy is used to characterize the defects in high T sub c superconductor, Ba sub 2 YCu sub 3 O sub (6.9) produced by two different ceramic processing procedures.
The generation and evolution of a novel defect structure in InGaAsP single layer and InGaAs/InP multilayer laser structures grown by hydride transport vapor phase epitaxy on (001)InP substrate has
The role of point defects during silicon dopant diffusion at high dopant concentrations is considered.
This memorandum investigates the role of defects in the diffusion of boron in silicon under extrinsic conditions.
The diffusion of electron-hole plasma in an intrinsic In0.53Ga0.47As single quantum well (SQW) was investigated by measurements of the PL intensity profile around the illuminated area.
Introduction of point defects and mechanical stress during the dry etching process of InP-based photonic structures has been investigated using the spectroscopic cathodo-luminescence (CL) technique
