The effects of high energy (~1 MeV) electron irradiation on the DC characteristics of InGaAs/InP single heterojunction bipolar transistors (SHBTs) are investigated.
The degradation of single-quantum-well graded-refractive-index GaAs lasers and LEDs grown on Si substrates by metalorganic vapor deposition was studied.
Using pulsed current excitation we have studied the rapid degradation of the laser properties of low threshold graded refractive index single quantum well GaAs lasers grown by metalorganic vapor d
The observed initial gain degradation of AlGaAs/GaAs heterojunction bipolar transistors under current stress was investigated.
The DC characteristics of InGaAs/InP double heterojunction bipolar transistors (DHBTs) are studied under high energy (~ 1 MeV) electron irradiation up to a fluence of 14.8 x 10 sup (15) electrons/c
We discuss, both by simulation and experiment, the impact of balanced DPSK receiver design parameters, such as detector amplitude and phase imbalance, interferometer delay mismatch, interferometer
A novel analytical model is proposed to predict the cross-phase modulation (XPM)-induced depolarization, in a two-channel transmission system, in which the Stokes' vector of each channel rotates ar
We demonstrate a degree-4 node using a single 1x7 wavelength- selective switch.
Considerable interest has been expressed by the aerospace community in a new class of composite material in which the matrix is a high temperature thermoplastic.
