This memorandum investigates the role of defects in the diffusion of boron in silicon under extrinsic conditions.
The diffusion of electron-hole plasma in an intrinsic In0.53Ga0.47As single quantum well (SQW) was investigated by measurements of the PL intensity profile around the illuminated area.
Introduction of point defects and mechanical stress during the dry etching process of InP-based photonic structures has been investigated using the spectroscopic cathodo-luminescence (CL) technique
Room temperature Hall mobilities of (100) HgTe films grown by molecular beam epitaxy can reach values of 27,000 - 31,000 cm sup 2 V sup(-1), while the mobilities of (111) films are only 14,000 - 1
Compound semiconductor materials based on III-V elements have become important materials as laser components in the wavelength region of 1.3~1.55microns.
Transport and optical properties of organic molecular crystals depend on the presence and distribution of crystallographic defects.
Defects in semiconductors have sustained the most active frontier in solid state science for the past twenty years. Of primary interest is the role of defects in device processing and function.
A detailed account (including 14 illustrations and 9 literature references), from which it is concluded that at the temperatures used for growth, the mobilities of silicon and impurity atoms, and o
Scanning and transmission electron microscopes were used to study the effect of cathodic charging of hydrogen on the defect structure of bulk copper foils.
In this work, we are interested on the analysis of competing marketing campaigns between an incumbent who dominates the market and a challenger who wants to enter the market.
