The quantitative variation of defect contrast as a function of experimental parameters in SEM-CCM measurements has been investigated experimentally.
Ta2O5 is a candidate for use in metal-oxide-metal (MOM) capacitors in several areas of silicon device technology.
Native defects play an important role in compound semiconductors. Their relative abundance is controlled by nonstoichiometry and thermodynamic considerations.
RAD ribbons exhibit a polycrystalline texture similar to that of most melt-grown ribbons with the exception of the WEB material.
Defect mechanisms of both gradual and rapid degradations of channeled-substrate-buried-heterostructure (CSBH) lasers during accelerated aging have been studied in detail by transmission electron mi
The application of transient junction current and capacitance techniques to the study of imperfection in semiconductor materials is reviewed.
X-ray diffraction studies show full atomic order in stoichiometric LiNbO3. In the congruent composition [Li0.941NbO2.971], 6% Li is missing from all Li-sites.
Transmission electron microscopy is used to characterize the defects in high T sub c superconductor, Ba sub 2 YCu sub 3 O sub (6.9) produced by two different ceramic processing procedures.
The generation and evolution of a novel defect structure in InGaAsP single layer and InGaAs/InP multilayer laser structures grown by hydride transport vapor phase epitaxy on (001)InP substrate has
The role of point defects during silicon dopant diffusion at high dopant concentrations is considered.
