Degradation of InGaAs/InP Double Heterojunction Bipolar Transistors under Electron Irradiation
01 May 1999
The DC characteristics of InGaAs/InP double heterojunction bipolar transistors (DHBTs) are studied under high energy (~ 1 MeV) electron irradiation up to a fluence of 14.8 x 10 sup (15) electrons/cm sup 2. The devices show an increase in common-emitter current gain (h sub (fe)) at low levels of dose (