DC and Microwave Performance of sub-Micron InGaAs HIGFETs

We report the dc and microwave performance of InAlAs/InGaAs/InP heterostructure FETs with gate lengths down to 0.3micron. An non-recessed-gate process with refractory airbridge gates and self-aligned contact implants was used to assure minimum threshold variation, minimum parasitic resistance, and minimum gate leakage current. These HIGFET (heterostructure-insulated-gate FET) devices offer improved threshold uniformity while preserving the high speed characteristic of In sub (0.53) Ga sub (0.47) As channels.