Screened-space-charge, transferred-electron oscillators.

We describe a novel form of monolithic semiconductor oscillator in which the space-charge field of a drifting charge packet is modified, by means of the electrostatic boundary conditions of the device, so as to produce no voltage drop across the packet. Under these conditions, we predict that a sequence of narrow, identical, contiguous packets can be formed producing extremely high-frequency oscillations in the 30-300 GHz range, independent of the length of the drift region.