Semiconductor Strained-Layer Epitaxy and Superlattices

The talk will discuss observations on single-crystal semiconductor films grown epitaxially on lattice mismatched substrates, a technique for creating novel elastically-strained layers and superlattices. Experiments on alloys of the group IV semiconductors, germanium and silicon, and of III-IV compounds will be used to illustrate the role of thermal metastability in these systems which often depart from thermodynamic equilibrium. Topics will include dislocation nucleation and growth, coherency strain relaxation, and constituent interfacial interdiffusion plus a survey of recent work.