Shallow p sup + layer in In sub (0.53) Ga sub (0.47) As using P/Be and As/Be Co-implant.

Be is implanted into MOCVD grown n-InGaAs. Both electrical and atomic profiles indicate that Be In-diffusion occurs during annealing resulting in a p layer thicker than that desired. A co-implant of P or As with Be significantly reduces this Be In-diffusion resulting in shallow (2000angstroms) p sup + -n junctions with 4E18cm sup (-3) surface hole concentration and 70% electrical efficiency.