Silicon based semiconductor heterostructures.

This paper reviews work on epitaxial heterostructures involving silicon layers and/or silicon substrates. Topics include the following: growth of lattice matched couples such as GaP on Si and Si on GaP; growth of lattice mismatched couples such as AlGaAs on Si; growth of strained layer Ge(x)Si(1-x) on Si. Physical properties and device results are included where available. The paper will be published as a chapter in the book "Silicon Molecular Beam Epitaxy," E. Kasper and J. C. Bean Eds., CRC Press.